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| Freescale Semiconductor Technical Data Document Number: MRF21090 Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. * Typical W - CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH: Output Power -- 11.5 Watts Efficiency -- 16% Gain -- 12.2 dB ACPR -- - 45 dBc * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power Features * Internally Matched for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF21090R3 MRF21090SR3 2110 - 2170 MHz, 90 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF21090R3 CASE 465C - 02, STYLE 1 NI - 880S MRF21090SR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 270 1.54 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 0.65 Unit C/W (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF21090R3 MRF21090SR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model MRF21090R3 MRF21090SR3 MRF21090R3 MRF21090SR3 Class 2 (Minimum) 1 (Minimum) M3 (Minimum) M4 (Minimum) Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Gate Threshold Voltage (VDS = 10 V, ID = 300 A) Gate Quiescent Voltage (VDS = 28 V, ID = 750 mA) Drain- Source On - Voltage (VGS = 10 V, ID = 1 A) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture) Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) 1. Part is internally matched both on input and output. Gps 10 11.7 -- dB Crss -- 4.2 -- pF gfs VGS(th) VGS(Q) VDS(on) -- 2 3 -- 7.2 3 3.8 0.1 -- 4 5 0.6 S Vdc Vdc Vdc V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 1 10 Vdc Adc Adc Symbol Min Typ Max Unit 30 33 -- % IMD -- - 30 - 27.5 dBc IRL -- - 12 - 9.0 dB Gps -- -- 11.7 41 -- -- dB % MRF21090R3 MRF21090SR3 2 RF Device Data Freescale Semiconductor R2 B1 VGG + C1 + C2 C3 C4 R1 Z11 + C7 C8 C9 + C10 C11 + C13 V DD RF OUTPUT Z10 RF INPUT Z1 C5 C6 Z2 Z3 Z4 Z5 DUT Z6 Z7 Z8 C12 C14 Z9 B1 C1, C13 C2, C10 C3, C9 C4, C8 C5, C12 C6 C7 C11 C14 R1 R2 Z1 Z2 Z3 Z4 Z5 Z6 Ferrite Bead, Fair Rite #2743019447 470 F, 50 V Electrolytic Capacitors 22 F, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 20 nF Chip Capacitors, ATC #100B203MCA500X 5.1 pF Chip Capacitors, ATC #100B5R1CCA500X 0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim 10 pF Chip Capacitor, ATC #100B100JCA500X 1 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet 1 nF Chip Capacitor, ATC #100B102JCA500X 8.2 pF Chip Capacitor, ATC #100B8R2CCA500X 13 , 1/4 W Chip Resistor, Garret Instrument #RM73B2B130JT, 12 , 1/4 W Chip Resistor, Garret Instrument #RM73B2B120JT 30.7 x 2.09 mm Microstrip 5.99 x 2.09 mm Microstrip 7.55 x 9.89 mm Microstrip 3.77 x 15.71 mm Microstrip 6.89 x 26.17 mm Microstrip 14.93 x 32.05 mm Microstrip Z7 Z8 Z9 Z10 Z11 WS1, WS2 10.23 x 2.09 mm Microstrip 6.03 x 2.09 mm Microstrip 23.98 x 2.09 mm Microstrip 29.82 x 1.15 mm Microstrip 17.08 x 1.15 mm Microstrip Beryllium Copper Wear Blocks 5 mils Thick Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type N Jack Connectors, 3052 - 1648- 10, Omni Specra 4 - 40 Head Screws 0.125 Long 4 - 40 Head Screws 0.188 Long 4 - 40 Head Screws 0.312 Long 4 - 40 Head Screws 0.438 Long Endplates Brass Endplates for Copper Bedstead Bedstead Copper Bedstead/Heatsink Insert Copper Bedstead Insert Raw PCB 0.030 Glass Teflon(R), 2 oz Copper Clad 3 x 5 Arion RF Circuit 3 x 5 Copper Clad PCB Teflon(R), MRF21090, CMR Figure 1. MRF21090R3(SR3) Test Circuit Schematic C7 C8 Gate Bias Feed C3 C4 C1 C2 C6 C5 C U T O U T B1 Drain Bias Feed R1 R2 C9 C11 C10 C13 C14 C12 MRF21090 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21090R3(SR3) Test Circuit Component Layout MRF21090R3 MRF21090SR3 RF Device Data Freescale Semiconductor 3 TYPICAL PERFORMANCE (IN FREESCALE TEST FIXTURE) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB 60 IRL -5 -10 -15 VDD = 28 Vdc Pout = 90 W (PEP) IDQ = 750 mA Two-Tone Measurement 100 kHz Tone Spacing -20 -25 -30 IMD 0 -35 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 2200 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 30 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz Channel Spacing (Channel Bandwidth): 4.096 MHz (5 MHz) ACPR 15 Gps 0 5.0 10 15 20 -50 -20 ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc) 50 25 -30 40 30 20 -40 20 Gps 10 10 5 -60 -70 Pout, OUTPUT POWER (WATTS) AVG. Figure 3. Class AB Broadband Circuit Performance Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc f = 2140 MHz -30 Two-Tone Measurement 100 kHz Tone Spacing -35 -40 -45 -50 -55 IMD, INTERMODULATION DISTORTION (dBc) -25 -20 -30 -40 -50 -60 -70 -80 VDD = 28 Vdc IDQ = 750 mA f = 2140 MHz Two-Tone Measurement 100 kHz Tone Spacing 500 mA 2000 mA 1500 mA 3rd Order 5th Order 7th Order 800 mA 1000 mA 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 5. Intermodulation Distortion versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power 15 VDD = 28 Vdc f = 2140 MHz Two-Tone Measurement 100 kHz Tone Spacing 11.8 11.6 G ps, POWER GAIN (dB) 11.4 11.2 11.0 10.8 500 mA IMD 100 10.6 20 22 24 26 28 30 VDS, DRAIN VOLTAGE (VOLTS) 32 34 Pout = 90 W (PEP) IDQ = 750 mA f = 2140 MHz Two-Tone Measurement 100 kHz Tone Spacing Fixture Tuned for 28 Volts -22 -24 -26 -28 -30 -32 -34 14 G ps, POWER GAIN (dB) 2000 mA 1500 mA 13 12 1000 mA 800 mA Gps 11 10 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power MRF21090R3 MRF21090SR3 4 Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage RF Device Data Freescale Semiconductor Zo = 5 f = 2170 MHz Zload f = 2110 MHz 2110 MHz Zsource 2170 MHz VDD = 28 V, IDQ = 750 mA, Pout = 90 W (PEP) f MHz 2110 2140 2170 Zsource 3.03 - j3.40 3.02 - j3.46 2.60 - j3.50 Zload 0.92 - j1.67 0.97 - j1.80 0.90 - j1.52 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF21090R3 MRF21090SR3 RF Device Data Freescale Semiconductor 5 NOTES MRF21090R3 MRF21090SR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 4 1 2X Q bbb M TA M B M (FLANGE) 3 B K D TA 2 bbb M M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. R M bbb ccc H C E A (FLANGE) M (INSULATOR) (LID) M (INSULATOR) M ccc M TA M B S TA TA M B B M N M M M (LID) aaa M TA M B F T A SEATING PLANE CASE 465B - 03 ISSUE D NI - 880 MRF21090R3 DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE B 1 (FLANGE) B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M (INSULATOR) M bbb ccc H C M R ccc M (LID) M (INSULATOR) M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M DIM A B C D E F H K M N R S aaa bbb ccc F E A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T A SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF21090SR3 MRF21090R3 MRF21090SR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. MRF21090R3 MRF21090SR3 8Rev. 8, 5/2006 Document Number: MRF21090 RF Device Data Freescale Semiconductor |
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